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產品描述
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Equipment Features
1. man-machine interface, PLC control.
2. Adopting single-arm robot, which can flexibly adjust the cleaning process.
3. Each cleaning tank set throwing mechanism to ensure the cleaning effect.
4. Adopt ultrasonic cleaning, bubble rinsing and other processes.
5. Using 28KHZ, 40KHZ multi-frequency ultrasonic wave.
6. Fully enclosed mechanism, beautiful appearance.
7. The equipment is installed with maintenance lighting inside, convenient for maintenance.
8. There are special trolleys for loading and unloading, which is convenient for staff to operate.
2. Adopting single-arm robot, which can flexibly adjust the cleaning process.
3. Each cleaning tank set throwing mechanism to ensure the cleaning effect.
4. Adopt ultrasonic cleaning, bubble rinsing and other processes.
5. Using 28KHZ, 40KHZ multi-frequency ultrasonic wave.
6. Fully enclosed mechanism, beautiful appearance.
7. The equipment is installed with maintenance lighting inside, convenient for maintenance.
8. There are special trolleys for loading and unloading, which is convenient for staff to operate.
Process Flow
Feeding → ultrasonic rough washing → ultrasonic fine washing → high pressure spray cleaning → ultrasonic rinsing → ultrasonic rinsing → hot air drying → discharging
Applications
The equipment is suitable for.
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1
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Pre-furnace cleaning: Cleaning before diffusion. |
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2
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Post-lithography cleaning: remove the photoresist. |
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3
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Automatic cleaning before oxidation: remove all stains from the silicon wafer surface before oxidation. |
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4
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Automatic cleaning after polishing: remove the stain of cutting, grinding and polishing. |
|
5
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Cleaning before epitaxy: remove SiO2 and surface dirt after diffusion of buried layer. |
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6
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Before alloying, cleaning before surface passivation: after removing aluminum wiring, surface impurities and light glue residue |
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7
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Cleaning after ion injection: Removal of photoresist, SiO2 layer |
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8
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Post-diffusion pre-precipitation cleaning: Removal of BSG and PSG during pre-precipitation. |
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9
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Cleaning before epitaxy: remove SiO2 and surface dirt after diffusion of buried layer. |
|
10
|
Post CVD cleaning: Remove particles from the CVD process. |
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